Invention Application
- Patent Title: FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
-
Application No.: US16642283Application Date: 2018-09-28
-
Publication No.: US20210036103A1Publication Date: 2021-02-04
- Inventor: Michael Everett Babb , Harlan Rusty Harris
- Applicant: The Texas A&M University System
- Applicant Address: US TX College Station
- Assignee: The Texas A&M University System
- Current Assignee: The Texas A&M University System
- Current Assignee Address: US TX College Station
- International Application: PCT/US2018/053572 WO 20180928
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L21/306 ; H01L21/308 ; H01L21/285 ; H01L29/66 ; H01L29/20 ; H01L29/45 ; H01L29/861
Abstract:
A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
Public/Granted literature
- US11121211B2 Fabrication of lateral superjunction devices using selective epitaxy Public/Granted day:2021-09-14
Information query
IPC分类:
