- 专利标题: WRAP-AROUND TRENCH CONTACT STRUCTURE AND METHODS OF FABRICATION
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申请号: US17082434申请日: 2020-10-28
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公开(公告)号: US20210043627A1公开(公告)日: 2021-02-11
- 发明人: Joseph STEIGERWALD , Tahir GHANI , Oleg GOLONZKA
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L29/417 ; H01L27/088 ; H01L29/66 ; H01L21/768 ; H01L23/485 ; H01L29/78
摘要:
A wrap-around source/drain trench contact structure is described. A plurality of semiconductor fins extend from a semiconductor substrate. A channel region is disposed in each fin between a pair of source/drain regions. An epitaxial semiconductor layer covers the top surface and sidewall surfaces of each fin over the source/drain regions, defining high aspect ratio gaps between adjacent fins. A pair of source/drain trench contacts are electrically coupled to the epitaxial semiconductor layers. The source/drain trench contacts comprise a conformal metal layer and a fill metal. The conformal metal layer conforms to the epitaxial semiconductor layers. The fill metal comprises a plug and a barrier layer, wherein the plug fills a contact trench formed above the fins and the conformal metal layer, and the barrier layer lines the plug to prevent interdiffusion of the conformal metal layer material and plug material.