公开(公告)号：US20200044049A1

公开(公告)日：2020-02-06

申请号：US16537020

申请日：2019-08-09

申请人： Intel Corporation

发明人： Andrew W. YEOH ,  Joseph STEIGERWALD ,  Jinhong SHIN ,  Vinay CHIKARMANE ,  Christopher P. AUTH

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/167 ,  H01L27/092 ,  H01L23/528 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/02 ,  H01L29/417 ,  H01L49/02 ,  H01L27/02 ,  H01L23/532 ,  H01L21/285 ,  H01L29/51 ,  H01L29/08 ,  H01L27/11 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/311 ,  H01L21/308 ,  H01L21/28 ,  H01L21/033 ,  H01L29/06 ,  H01L29/165 ,  H01L23/522 ,  H01L27/088

摘要： Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

公开(公告)号：US20210066475A1

公开(公告)日：2021-03-04

申请号：US17080694

申请日：2020-10-26

申请人： Intel Corporation

发明人： Andrew W. YEOH ,  Joseph STEIGERWALD ,  Jinhong SHIN ,  Vinay CHIKARMANE ,  Christopher P. AUTH

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/165 ,  H01L29/417 ,  H01L21/033 ,  H01L21/28 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L27/11 ,  H01L49/02 ,  H01L29/08 ,  H01L29/51 ,  H01L27/02 ,  H01L21/02 ,  H01L29/167

摘要： Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

公开(公告)号：US20190164897A1

公开(公告)日：2019-05-30

申请号：US15859416

申请日：2017-12-30

申请人： Intel Corporation

发明人： Andrew W. YEOH ,  Joseph STEIGERWALD ,  Jinhong SHIN ,  Vinay CHIKARMANE ,  Christopher P. AUTH

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8234 ,  H01L27/088

摘要： Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

公开(公告)号：US20230101723A1

公开(公告)日：2023-03-30

申请号：US18077142

申请日：2022-12-07

申请人： Intel Corporation

发明人： Andrew W. YEOH ,  Joseph STEIGERWALD ,  Jinhong SHIN ,  Vinay CHIKARMANE ,  Christopher P. AUTH

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/165 ,  H01L29/417 ,  H01L21/033 ,  H01L21/28 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L27/11 ,  H01L49/02 ,  H01L29/08 ,  H01L29/51 ,  H01L27/02 ,  H01L21/02 ,  H01L29/167

摘要： Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

公开(公告)号：US20210043627A1

公开(公告)日：2021-02-11

申请号：US17082434

申请日：2020-10-28

申请人： Intel Corporation

发明人： Joseph STEIGERWALD ,  Tahir GHANI ,  Oleg GOLONZKA

IPC分类号： H01L27/092 ,  H01L29/417 ,  H01L27/088 ,  H01L29/66 ,  H01L21/768 ,  H01L23/485 ,  H01L29/78

摘要： A wrap-around source/drain trench contact structure is described. A plurality of semiconductor fins extend from a semiconductor substrate. A channel region is disposed in each fin between a pair of source/drain regions. An epitaxial semiconductor layer covers the top surface and sidewall surfaces of each fin over the source/drain regions, defining high aspect ratio gaps between adjacent fins. A pair of source/drain trench contacts are electrically coupled to the epitaxial semiconductor layers. The source/drain trench contacts comprise a conformal metal layer and a fill metal. The conformal metal layer conforms to the epitaxial semiconductor layers. The fill metal comprises a plug and a barrier layer, wherein the plug fills a contact trench formed above the fins and the conformal metal layer, and the barrier layer lines the plug to prevent interdiffusion of the conformal metal layer material and plug material.