发明申请
- 专利标题: PLASMA PROCESSING APPARATUS, PROCESSING METHOD, AND UPPER ELECTRODE STRUCTURE
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申请号: US17005587申请日: 2020-08-28
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公开(公告)号: US20210074520A1公开(公告)日: 2021-03-11
- 发明人: Kota SHIHOMMATSU , Junji ISHIBASHI , Junichi SASAKI , Hidetoshi HANAOKA
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JP2019-162324 20190905
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.