公开(公告)号：US20210074520A1

公开(公告)日：2021-03-11

申请号：US17005587

申请日：2020-08-28

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Junji ISHIBASHI ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC: H01J37/32

Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.

公开(公告)号：US20230395360A1

公开(公告)日：2023-12-07

申请号：US18205426

申请日：2023-06-02

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Koki TANAKA ,  Yuzuru SAKAI ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J2237/182 ,  H01J37/32449 ,  H01J37/32137

Abstract: Provided is a technique capable of suppressing pressure fluctuations within a plasma processing chamber. A plasma processing apparatus according to the present disclosure includes: a chamber; a gas supply that supplies a processing gas into the chamber; a power supply that generates a source RF signal to form a plasma from the processing gas within the chamber; a storage that stores in advance a source set value that is a set value of a parameter of the source RF signal; a pressure regulation valve connected to the chamber, the pressure regulation valve being configured to regulate an internal pressure of the chamber; an opening degree calculator that calculates an opening degree of the pressure regulation valve, the opening degree being calculated based on the source set value; and an opening degree controller that controls the opening degree of the pressure regulation valve based on the calculated opening degree.

公开(公告)号：US20230207276A1

公开(公告)日：2023-06-29

申请号：US18086647

申请日：2022-12-22

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32183 ,  H01J37/32715 ,  H01J37/32091 ,  H01J2237/334

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having a substrate support configured to support a substrate; a shower head having a plurality of gas inlets configured to introduce a gas into respective regions in the plasma processing chamber; a gas supply configured to supply a gas to the plurality of gas inlets; a plasma generator configured to generate a plasma of the gas; and a controller configured to control at least the gas supply. The gas supply includes: a gas unit configured to supply a common gas to the plurality of gas inlets; and an injection unit configured to supply an injection gas to the selected gas inlet among the plurality of gas inlets, and the controller controls the injection unit so that two or more types of injection gases are supplied to two different ones of the plurality of gas inlets.