公开(公告)号：US20210074520A1

公开(公告)日：2021-03-11

申请号：US17005587

申请日：2020-08-28

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Junji ISHIBASHI ,  Junichi SASAKI ,  Hidetoshi HANAOKA

IPC: H01J37/32

Abstract: An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.

公开(公告)号：US20230077143A1

公开(公告)日：2023-03-09

申请号：US17940508

申请日：2022-09-08

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Junji ISHIBASHI ,  Fumiaki ARIYOSHI ,  Sho HAKOZAKI ,  Fumitoshi KUMAGAI

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, an upper electrode, and at least one power supply. The chamber provides a processing space therein. The substrate support is provided in the chamber. The upper electrode configures a shower head that introduces a gas into the processing space from above the processing space. The upper electrode includes a first electrode and a second electrode. The first electrode provides a plurality of first gas holes opened toward the processing space. The second electrode is provided directly or indirectly on the first electrode and provides a plurality of second gas holes communicating with the plurality of first gas holes. The at least one power supply is configured to set a potential of the second electrode to a potential higher than a potential of the first electrode.