Invention Application
- Patent Title: METHOD OF FORMING PATTERN AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US16816478Application Date: 2020-03-12
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Publication No.: US20210082693A1Publication Date: 2021-03-18
- Inventor: Koji ASAKAWA , Norikatsu SASAO , Shinobu SUGIMURA
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2019-169871 20190918
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105

Abstract:
A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.
Information query
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