公开(公告)号：US20220221792A1

公开(公告)日：2022-07-14

申请号：US17707720

申请日：2022-03-29

Applicant: Kioxia Corporation

Inventor： Ryosuke YAMAMOTO ,  Seiji MORITA ,  Norikatsu SASAO ,  Koji ASAKAWA ,  Tomoaki SAWABE ,  Shinobu SUGIMURA

IPC: G03F7/09 ,  C08F220/08 ,  C08F212/08 ,  C08F120/08 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  C08F120/28 ,  G03F7/40 ,  H01L21/033 ,  H01L21/311 ,  C08F220/28

Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

公开(公告)号：US20210296117A1

公开(公告)日：2021-09-23

申请号：US17010021

申请日：2020-09-02

Applicant: Kioxia Corporation

Inventor： Ryosuke YAMAMOTO ,  Koji ASAKAWA ,  Ayaka SUKO

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/00

Abstract: A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

公开(公告)号：US20210070898A1

公开(公告)日：2021-03-11

申请号：US16814030

申请日：2020-03-10

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: C08F20/30 ,  C07C69/76 ,  C08F12/22 ,  C09D125/18 ,  C09D133/14 ,  H01L21/027

Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where α carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.

公开(公告)号：US20240004298A1

公开(公告)日：2024-01-04

申请号：US18466668

申请日：2023-09-13

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: G03F7/11 ,  C07C69/78 ,  C08F12/22 ,  H01L21/311 ,  H01L21/027

CPC classification number: G03F7/11 ,  C07C69/78 ,  C08F12/22 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/0271 ,  H10B41/27

Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3),






where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.

公开(公告)号：US20230220130A1

公开(公告)日：2023-07-13

申请号：US18187584

申请日：2023-03-21

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: C08F20/30 ,  C08F12/22 ,  C09D125/18 ,  C09D133/14

CPC classification number: C08F20/30 ,  C08F12/22 ,  C09D125/18 ,  C09D133/14

Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below,




where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.

公开(公告)号：US20230086850A1

公开(公告)日：2023-03-23

申请号：US17675770

申请日：2022-02-18

Applicant: Kioxia Corporation

Inventor： Koji ASAKAWA ,  Norikatsu SASAO ,  Shinobu SUGIMURA

IPC: G03F7/039 ,  G03F7/32 ,  C08L85/00

Abstract: A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.

公开(公告)号：US20210082693A1

公开(公告)日：2021-03-18

申请号：US16816478

申请日：2020-03-12

Applicant: Kioxia Corporation

Inventor： Koji ASAKAWA ,  Norikatsu SASAO ,  Shinobu SUGIMURA

IPC: H01L21/02 ,  H01L21/3105

Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.

公开(公告)号：US20230089206A1

公开(公告)日：2023-03-23

申请号：US17682768

申请日：2022-02-28

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA ,  Ryosuke YAMAMOTO

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

公开(公告)号：US20220091510A1

公开(公告)日：2022-03-24

申请号：US17196988

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Norikatsu SASAO ,  Koji ASAKAWA ,  Shinobu SUGIMURA

IPC: G03F7/11 ,  C07C69/78 ,  C08F12/22 ,  H01L21/027 ,  H01L21/311

Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.

公开(公告)号：US20210296116A1

公开(公告)日：2021-09-23

申请号：US16997115

申请日：2020-08-19

Applicant: Kioxia Corporation

Inventor： Koji ASAKAWA ,  Norikatsu SASAO ,  Shinobu SUGIMURA

IPC: H01L21/027 ,  H01L21/308 ,  H01L21/311

Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.