- 专利标题： PEROVSKITE MULTILAYERED STRUCTURE AND MANUFACTURING METHOD THEREOF
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申请号： US16883597申请日： 2020-05-26
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公开(公告)号： US20210091309A1公开(公告)日： 2021-03-25
- 发明人: In Soo Kim , Young Hwan Kim , Kwan II Lee , Chun Keun Kim , Byung Hyun Nam , Hye Jun Kim
- 申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 申请人地址： KR Seoul
- 专利权人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- 当前专利权人地址： KR Seoul
- 优先权： KR10-2019-0115580 20190919
- 主分类号： H01L51/00
- IPC分类号： H01L51/00 ; H01L51/42
摘要：
A method of manufacturing a perovskite multilayered structure includes providing a substrate, forming a first perovskite layer on the substrate, forming a second perovskite layer by a reaction between the halogen compounds and at least one of the metal halides, the metal oxides, or the metal sulfides.
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