公开(公告)号：US11189794B2

公开(公告)日：2021-11-30

申请号：US16883597

申请日：2020-05-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： In Soo Kim ,  Young Hwan Kim ,  Kwan Il Lee ,  Chun Keun Kim ,  Byung Hyun Nam ,  Hye Jun Kim

IPC: H01L51/00 ,  H01L51/42

Abstract: A method of manufacturing a perovskite multilayered structure includes providing a substrate, forming a first perovskite layer on the substrate, forming a second perovskite layer by a reaction between the halogen compounds and at least one of the metal halides, the metal oxides, or the metal sulfides.

公开(公告)号：US20230066491A1

公开(公告)日：2023-03-02

申请号：US17893016

申请日：2022-08-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： In Soo KIM ,  Donghee Son ,  Hannah Kwon ,  Hye Jun Kim ,  Duhwan Seong ,  Jinhyun Kim

IPC: H01L25/16

Abstract: Provided is a device assembly including a substrate for mounting a device thereon, electrodes provided on the substrate to be electrically connected to the device, and an encapsulation provided on the substrate and the electrodes to accommodate and encapsulate the device therein, wherein the substrate and the encapsulation are made of a self-healing polymer (SHP), and wherein the electrodes are made of a conductive polymer composite including the SHP.

公开(公告)号：US20210091309A1

公开(公告)日：2021-03-25

申请号：US16883597

申请日：2020-05-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： In Soo Kim ,  Young Hwan Kim ,  Kwan II Lee ,  Chun Keun Kim ,  Byung Hyun Nam ,  Hye Jun Kim

IPC: H01L51/00 ,  H01L51/42

Abstract: A method of manufacturing a perovskite multilayered structure includes providing a substrate, forming a first perovskite layer on the substrate, forming a second perovskite layer by a reaction between the halogen compounds and at least one of the metal halides, the metal oxides, or the metal sulfides.