- 专利标题: PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
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申请号: US17027792申请日: 2020-09-22
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公开(公告)号: US20210118647A1公开(公告)日: 2021-04-22
- 发明人: Junichi SASAKI , Yasuharu SASAKI , Hidetoshi HANAOKA , Tomohiko AKIYAMA
- 申请人: Tokyo Electron Limited
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 优先权: JP2019-190052 20191017
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01L21/683 ; H01L21/311
摘要:
A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
公开/授权文献
- US11417500B2 Plasma processing apparatus and plasma processing method 公开/授权日:2022-08-16