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公开(公告)号：US20220336193A1
公开(公告)日：2022-10-20
申请号：US17810523
申请日：2022-07-01
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683
摘要： A disclose substrate support of a plasma processing apparatus has an electrostatic chuck that holds an edge ring. The electrostatic chuck includes a first electrode and a second electrode. In an execution period of a first plasma processing on a substrate, first potentials which are ones out of potentials same as each other and potentials different from each other are set to the first and second electrodes, respectively. In an execution period of a second plasma processing on the substrate, second potentials which are others out of the potentials same as each other and the potentials different from each other are set to the first and second electrodes, respectively. The respective potentials of the first electrode and the second electrode are switched from the first potentials to the second potentials.
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公开(公告)号：US20220285138A1
公开(公告)日：2022-09-08
申请号：US17653165
申请日：2022-03-02
发明人： Shin YAMAGUCHI , Yasuharu SASAKI , Koei ITO
IPC分类号： H01J37/32 , H01L21/683
摘要： A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.
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公开(公告)号：US20210316416A1
公开(公告)日：2021-10-14
申请号：US17358100
申请日：2021-06-25
发明人： Taketoshi TOMIOKA , Yasuharu SASAKI , Hiroki KISHI , Jisoo SUH
摘要： A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.
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4.发明申请公开(公告)号：US20210074522A1
公开(公告)日：2021-03-11
申请号：US16952875
申请日：2020-11-19
IPC分类号： H01J37/32 , H01L21/67 , H01L21/687 , H01L21/683
摘要： A plasma processing apparatus includes a processing chamber that performs a plasma processing using plasma; a placing table provided in the processing chamber and including a substrate placing portion and a focus ring placing portion, the focus ring placing portion surrounding the substrate placing portion; a focus ring disposed on the focus ring placing portion; a first electrode and a second electrode both disposed inside the focus ring placing portion; a DC power source configured to apply a first DC voltage to the first electrode and apply a second DC voltage to the second electrode; and a controller configured to control the DC power source such that respective polarities of the first DC voltage and the second DC voltage are independently and periodically switched.
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公开(公告)号：US20200152429A1
公开(公告)日：2020-05-14
申请号：US16677902
申请日：2019-11-08
发明人： Yasuharu SASAKI , Shingo KOIWA
IPC分类号： H01J37/32 , H01L21/683
摘要： A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; and a second support area configured to support a focus ring placed thereon. The second support area includes a lower electrode, a chuck area, and a bonding area. The chuck area includes a first electrode and a second electrode, and is configured to hold the focus ring by a potential difference set between the first electrode and the second electrode. The first electrode and the second electrode extend in the circumferential direction, and the first electrode is provided inward in the radial direction with respect to the second electrode. The substrate support further includes a first conducting wire and a second conducting wire each extending around a center or on the center between an inner boundary and an outer boundary of the second support area.
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公开(公告)号：US20190088523A1
公开(公告)日：2019-03-21
申请号：US16129941
申请日：2018-09-13
IPC分类号： H01L21/683 , H01J37/32 , H01L21/687 , H01L21/3065
摘要： A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.
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公开(公告)号：US20180158711A1
公开(公告)日：2018-06-07
申请号：US15829096
申请日：2017-12-01
发明人： Yasuharu SASAKI , Akira ISHIKAWA , Ryo CHIBA
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： H01L21/68742 , H01L21/6831 , H01L21/6833 , H01L21/68757 , Y10T279/23
摘要： A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.
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公开(公告)号：US20180090361A1
公开(公告)日：2018-03-29
申请号：US15718126
申请日：2017-09-28
发明人： Yasuharu SASAKI , Daiki SATOH , Akira NAGAYAMA
IPC分类号： H01L21/683 , H01L21/687 , H01L21/67 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/68742
摘要： A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.
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公开(公告)号：US20240194457A1
公开(公告)日：2024-06-13
申请号：US18582163
申请日：2024-02-20
CPC分类号： H01J37/32715 , H01J37/32082 , H01J37/32642 , H02N13/00 , H01J2237/2007 , H01J2237/334
摘要： The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.
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公开(公告)号：US20240186917A1
公开(公告)日：2024-06-06
申请号：US18443834
申请日：2024-02-16
发明人： Masashi SHIMODA , Yasuharu SASAKI
IPC分类号： H02N13/00 , C23C16/458
CPC分类号： H02N13/00 , C23C16/4586
摘要： An electrostatic chuck, includes: a central region configured to support a substrate; at least one through-hole formed in the central region; a first substrate contact portion arranged around the through-hole; and a second substrate contact portion arranged around the first substrate contact portion. The first substrate contact portion and the second substrate contact portion have protrusions protruding upward from the central region. The protrusions are arranged in the first substrate contact portion at a first density. The protrusions are arranged in the second substrate contact portion at a second density lower than the first density.
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