A semiconductor memory device according to an embodiment includes a substrate, a first memory cell, a first bit line, a first word line, a first transistor, and a second transistor. The first memory cell is provided above the substrate. The first bit line extends in a first direction. The first bit line is coupled to the first memory cell. The first word line extends in a second direction intersecting the first direction. The first word line is coupled to the first memory cell. The first transistor is provided on the substrate. The first transistor is coupled to the first bit line. The second transistor is provided below the first memory cell and on the substrate. The second transistor is coupled to the first word line.