- 专利标题: METHOD FOR MAKING PHOTOLITHOGRAPHY MASK PLATE
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申请号: US17150220申请日: 2021-01-15
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公开(公告)号: US20210132500A1公开(公告)日: 2021-05-06
- 发明人: Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
- 申请人: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- 申请人地址: CN Beijing; TW New Taipei
- 专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人地址: CN Beijing; TW New Taipei
- 优先权: CN201611095319.2 20161201
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F1/48 ; G03F7/30 ; G03F1/00 ; G03F1/50
摘要:
A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.
公开/授权文献
- US11947261B2 Method for making photolithography mask plate 公开/授权日:2024-04-02
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