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公开(公告)号：US11948793B2
公开(公告)日：2024-04-02
申请号：US17206793
申请日：2021-03-19
发明人： Tian-Fu Zhang , Li-Hui Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L21/00 , H01L21/02 , H01L21/04 , H01L21/78 , H01L29/06 , H01L29/16 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02527 , H01L21/02603 , H01L21/042 , H01L21/043 , H01L21/044 , H01L21/7806 , H01L29/0673 , H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/66045 , H01L29/78696
摘要： A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The substrate includes a plurality of protrusions spaced apart from each other, and one of the plurality of graphene nanoribbons is on the substrate and between two adjacent protrusions. An interdigital electrode is placed on the graphene nanoribbon composite structure, and the interdigital electrode covers the plurality of protrusions and is electrically connected to the plurality of graphene nanoribbons.
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公开(公告)号：US11658232B2
公开(公告)日：2023-05-23
申请号：US17206786
申请日：2021-03-19
发明人： Tian-Fu Zhang , Li-Hui Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/76 , H01L29/06 , H01L29/16 , H01L29/417 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/02 , H01L21/78 , H01L21/04
CPC分类号： H01L29/7606 , H01L21/02527 , H01L21/02603 , H01L21/042 , H01L21/043 , H01L21/044 , H01L21/7806 , H01L29/0673 , H01L29/1606 , H01L29/41733 , H01L29/42384 , H01L29/66045 , H01L29/78696
摘要： A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The plurality of graphene nanoribbons are located on the substrate and extend substantially along a same direction, and each of the plurality of graphene nanoribbons includes a first end and a second end opposite to the first end. A source electrode is formed on the first end, and a drain electrode is formed on the second end. The source electrode and the drain electrode are electrically connected to the plurality of graphene nanoribbons. An insulating layer is formed on the plurality of graphene nanoribbons, and the plurality of graphene nanoribbons are between the insulating layer and the substrate. A gate is formed on a surface of the insulating layer away from the substrate.
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公开(公告)号：US11198610B2
公开(公告)日：2021-12-14
申请号：US16116091
申请日：2018-08-29
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
摘要： The disclosure relates to a method for making carrier for use in single molecule detection. The method includes: providing a rigid substrate; coating a polymer layer on a surface of the rigid substrate, the polymer layer is in semisolid state; transferring a nano-scaled pattern of a template on a surface of the polymer layer by pressing the template on the surface of the polymer layer; obtaining a flexible substrate by removing the template; and applying a metal layer on the flexible substrate. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.
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公开(公告)号：US11173478B2
公开(公告)日：2021-11-16
申请号：US16380247
申请日：2019-04-10
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Xiao-Yang Xiao , Tian-Fu Zhang , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B01J35/00 , B01J21/18 , B01J23/52 , B01J23/50 , B01J23/72 , B01J23/745 , B01J23/755 , B01J21/02 , B01J21/06 , B01J23/06 , B01J23/14 , B01J27/04 , B01J37/02 , B01J37/08 , B01J37/34 , C25B1/55
摘要： The disclosure relates to a photocatalytic structure. The photocatalytic structure includes a carbon nanotube structure, a photocatalytic active layer coated on the carbon nanotube structure, and a metal layer including a plurality of nanoparticles located on the surface of the photocatalytic active layer. The carbon nanotube structure comprises a plurality of intersected carbon nanotubes and defines a plurality of openings, and the photocatalytic active layer is coated on the surface of the plurality of carbon nanotubes. The metal layer includes a plurality of nanoparticles located on the surface of the photocatalytic active layer.
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公开(公告)号：US20210132500A1
公开(公告)日：2021-05-06
申请号：US17150220
申请日：2021-01-15
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.
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公开(公告)号：US10942453B2
公开(公告)日：2021-03-09
申请号：US16734440
申请日：2020-01-06
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making microstructures, including: setting a photoresist layer on a base; covering the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer so that the carbon nanotube layer is sandwiched between the patterned chrome layer and the substrate, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the patterned chrome layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
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公开(公告)号：US10852241B2
公开(公告)日：2020-12-01
申请号：US16119679
申请日：2018-08-31
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
摘要： A method for detecting molecular is related. The method includes providing a sample, in which a sample surface is distributed with analyte molecules; providing a carrier including a substrate, a middle layer and a metal layer, in which the middle layer is sandwiched between the substrate and the metal layer, the middle layer includes a base and a patterned bulge on a surface of the base, the patterned bulge includes a plurality of strip-shaped bulges intersected with each other to form a net and define a number of holes, and the metal layer is on the patterned bulge; placing the carrier on the sample surface to make the metal layer being attached to the sample surface, in which parts of the analyte molecules are formed on the metal layer; detecting the analyte molecules on the metal layer with a detector.
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公开(公告)号：US10527553B2
公开(公告)日：2020-01-07
申请号：US16116073
申请日：2018-08-29
发明人： Ying-Cheng Wang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： G01N21/01 , G01N21/65 , G01J3/44 , C01B32/158
摘要： The disclosure relates to a carrier for use in single molecule detection. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.
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公开(公告)号：US10431662B2
公开(公告)日：2019-10-01
申请号：US15817520
申请日：2017-11-20
发明人： Yu-Jia Huo , Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/423 , H01L21/02 , H01L51/00 , H01L29/16 , H01L29/06 , H01L29/24 , C08L67/02 , H01L29/66 , H01L51/05 , H01L29/786
摘要： The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.
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公开(公告)号：US10372031B2
公开(公告)日：2019-08-06
申请号：US15680334
申请日：2017-08-18
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A method of making microstructures, the method including: providing a first substrate, setting a photoresist layer on a surface of the first substrate; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate comprises a second substrate and a carbon nanotube composite layer located on a surface of the second substrate; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; developing the exposed photoresist layer to obtain a patterned photoresist microstructures.
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