- 专利标题: SOCKET DESIGN FOR A MEMORY DEVICE
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申请号: US16685349申请日: 2019-11-15
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公开(公告)号: US20210151105A1公开(公告)日: 2021-05-20
- 发明人: Amitava Majumdar , Radhakrishna Kotti , Rajasekhar Venigalla
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; H01L23/528 ; H01L23/522 ; H01L27/24 ; H01L45/00
摘要:
Methods, systems, and devices supporting a socket design for a memory device are described. A die may include one or more memory arrays, which each may include any number of word lines and any number of bit lines. The word lines and the bit lines may be oriented in different directions, and memory cells may be located at the intersections of word lines and bit lines. Sockets may couple the word lines and bit lines to associated drivers, and the sockets may be located such that memory cells farther from a corresponding word line socket are nearer a corresponding bit line socket, and vice versa. For example, sockets may be disposed in rows or regions that are parallel to one another, and which may be non-orthogonal to the corresponding word lines and bit lines.
公开/授权文献
- US11222695B2 Socket design for a memory device 公开/授权日:2022-01-11
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