- 专利标题: PLASMA PROCESSING APPARATUS AND GAS INTRODUCING METHOD
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申请号: US17105938申请日: 2020-11-27
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公开(公告)号: US20210166918A1公开(公告)日: 2021-06-03
- 发明人: Mayo UDA , Manabu TSURUTA , Keigo TOYODA
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2019-215263 20191128
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J37/20
摘要:
A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.
公开/授权文献
- US11562889B2 Plasma processing apparatus and gas introducing method 公开/授权日:2023-01-24