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公开(公告)号：US20160365229A1
公开(公告)日：2016-12-15
申请号：US15175229
申请日：2016-06-07
发明人： Keigo TOYODA , Hiroshi TSUJIMOTO
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , G05B2219/45212 , H01J37/32009 , H01J37/3244 , H01J37/32724 , H01J37/32935 , H01J2237/334
摘要： A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.
摘要翻译： 一种用于控制等离子体处理装置中的安装台的温度的方法，包括：根据在给定过程中施加的高频功率来计算第一热输入量，其中基于数据表计算第一热输入量， 数据表是通过测量温度产生的，以便找到在等离子体处理装置中施加的高频功率与安装台的热输入量之间的第一关系; 基于操作图来控制第一加热机构和冷却机构中的至少一个的温度，使得冷却机构和第一加热机构之间的第一温度差在与第一加热输入量对应的可控范围内 ，其中所述第一加热机构的温度在所述可控制的第一温差之后是可控的。
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公开(公告)号：US20160372308A1
公开(公告)日：2016-12-22
申请号：US15180672
申请日：2016-06-13
发明人： Hiraku MURAKAMI , Nobutaka SASAKI , Shigeru SENZAKI , Takanori BANSE , Hiroshi TSUJIMOTO , Keigo TOYODA
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32477 , H01J37/32504
摘要： Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.
摘要翻译： 公开了一种等离子体处理方法。 该方法包括在等离子体处理装置的处理容器的内壁表面上形成保护膜; 对处理容器内的工件进行处理。 当形成保护膜时，从安装台和处理容器的侧壁之间的空间的上侧供应保护膜形成气体，从而产生等离子体。 当执行处理时，从安装台的上侧供给工件处理气体，从而产生等离子体。
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公开(公告)号：US20210166918A1
公开(公告)日：2021-06-03
申请号：US17105938
申请日：2020-11-27
发明人： Mayo UDA , Manabu TSURUTA , Keigo TOYODA
摘要： A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.
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公开(公告)号：US20160079074A1
公开(公告)日：2016-03-17
申请号：US14785392
申请日：2014-05-21
发明人： Keigo TOYODA , Masaru ISAGO , Hiroshi TSUJIMOTO
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32 , H01L21/66
CPC分类号： H01L21/3065 , H01J37/32522 , H01J37/32642 , H01L21/31116 , H01L21/67069 , H01L21/67248 , H01L21/6831 , H01L22/26
摘要： An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.
摘要翻译： 提供了一种用于通过使用供应气体对待处理物体进行等离子体蚀刻的蚀刻方法。 在蚀刻方法中，通过使用可独立于待处理物体的温度控制控制的第一温度调节机构来调节聚焦环的温度，同时测量直到聚焦环的温度达到目标值的时间变化。 基于时间变化与聚焦环的消耗程度之间的预先设定的相关性，从所测量的时间变化估计聚焦环的消耗程度。 基于估计的聚焦环的消耗程度来校正聚焦环的温度的目标值。
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公开(公告)号：US20190189493A1
公开(公告)日：2019-06-20
申请号：US16322863
申请日：2017-08-01
发明人： Shuhei OGAWA , Keigo TOYODA , Yoshihide KIHARA
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/67 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/32715 , H01J2237/20214 , H01J2237/3341 , H01L21/3065 , H01L21/308 , H01L21/31116 , H01L21/3213 , H01L21/67069 , H01L21/768 , H05H1/46
摘要： A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.
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公开(公告)号：US20190098740A1
公开(公告)日：2019-03-28
申请号：US16144714
申请日：2018-09-27
发明人： Yohei YAMAZAWA , Takehisa SAITO , Mayo UDA , Keigo TOYODA , Alok RANJAN , Toshiki NAKAJIMA
IPC分类号： H05H1/46 , H05H1/24 , H01J37/305 , H01J37/32 , H01L21/67
摘要： A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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