- 专利标题: CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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申请号: US17030152申请日: 2020-09-23
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公开(公告)号: US20210202691A1公开(公告)日: 2021-07-01
- 发明人: Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2019-0177914 20191230
- 主分类号: H01L49/02
- IPC分类号: H01L49/02 ; H01L27/108
摘要:
A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
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