Invention Application
- Patent Title: NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA
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Application No.: US17232639Application Date: 2021-04-16
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Publication No.: US20210257495A1Publication Date: 2021-08-19
- Inventor: MENG-SHENG CHANG , CHIA-EN HUANG , YAO-JEN YANG , YIH WANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW HSINCHU
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW HSINCHU
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L21/8234 ; H01L21/8239
Abstract:
A memory device includes a substrate, a semiconductor fin over the substrate and extending in a first direction, and a first gate electrode and a second gate electrode over the substrate and extending in a second direction. The semiconductor fin extends through the second gate electrode and terminates on the first gate electrode at one end. The memory device further includes a first conductive via over and electrically coupled to the first gate electrode. The one end of the semiconductor fin is surrounded by the first gate electrode.
Public/Granted literature
- US11532752B2 Non-volatile memory device with reduced area Public/Granted day:2022-12-20
Information query
IPC分类:
