- 专利标题: SEMICONDUCTOR STACK AND METHOD FOR MANUFACTURING THE SAME
-
申请号: US17035215申请日: 2020-09-28
-
公开(公告)号: US20210305186A1公开(公告)日: 2021-09-30
- 发明人: Hyungjun JEON , Kwangjin MOON , Hakseung LEE , Hyoukyung CHO
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2020-0036637 20200326
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/065 ; H01L21/683 ; H01L21/78 ; H01L25/00
摘要:
A semiconductor stack and a method for manufacturing the same are disclosed. The semiconductor stack includes a lower chip, an upper chip disposed over the lower chip, an upper lateral-side passivation layer surrounding side surfaces of the upper chip, and a plurality of bonding pads and a bonding passivation layer disposed between the upper chip and the lower chip.
公开/授权文献
- US11315894B2 Semiconductor stack and method for manufacturing the same 公开/授权日:2022-04-26
信息查询
IPC分类: