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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037235A1

    公开(公告)日：2022-02-03

    申请号：US17185166

    申请日：2021-02-25

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hakseung LEE ,  Kwangjin MOON ,  Hyungjun JEON ,  Hyoukyung CHO

    IPC分类号： H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

    摘要： A semiconductor device may include a substrate including a first surface and a second surface, which are opposite to each other, an insulating layer on the first surface of the substrate, a first via structure and a second via structure penetrating the substrate and a portion of the insulating layer and having different widths from each other in a direction parallel to the first surface of the substrate, metal lines provided in the insulating layer, and an integrated circuit provided on the first surface of the substrate. A bottom surface of the first via structure may be located at a level lower than a bottom surface of the second via structure, when measured from the first surface of the substrate. The second via structure may be electrically connected to the integrated circuit through the metal lines.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODES
    3.
    发明公开
    SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODES 审中-公开

    公开(公告)号：US20240274509A1

    公开(公告)日：2024-08-15

    申请号：US18610651

    申请日：2024-03-20

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyoukyung CHO ,  Hojin LEE ,  Kwangjin MOON

    IPC分类号： H01L23/48 ,  H01L21/762 ,  H01L21/768 ,  H01L25/065 ,  H01L29/06

    CPC分类号： H01L23/481 ,  H01L21/76224 ,  H01L21/76816 ,  H01L21/76898 ,  H01L25/0657 ,  H01L29/0649 ,  H01L2225/06544

    摘要： A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODES
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING THROUGH-ELECTRODES 有权

    公开(公告)号：US20220399251A1

    公开(公告)日：2022-12-15

    申请号：US17708137

    申请日：2022-03-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hyoukyung CHO ,  Hojin LEE ,  Kwangjin MOON

    IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L25/065 ,  H01L21/762 ,  H01L29/06

    摘要： A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.