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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037235A1

    公开(公告)日：2022-02-03

    申请号：US17185166

    申请日：2021-02-25

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hakseung LEE ,  Kwangjin MOON ,  Hyungjun JEON ,  Hyoukyung CHO

    IPC分类号： H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

    摘要： A semiconductor device may include a substrate including a first surface and a second surface, which are opposite to each other, an insulating layer on the first surface of the substrate, a first via structure and a second via structure penetrating the substrate and a portion of the insulating layer and having different widths from each other in a direction parallel to the first surface of the substrate, metal lines provided in the insulating layer, and an integrated circuit provided on the first surface of the substrate. A bottom surface of the first via structure may be located at a level lower than a bottom surface of the second via structure, when measured from the first surface of the substrate. The second via structure may be electrically connected to the integrated circuit through the metal lines.

    SEMICONDUCTOR DEVICE INCLUDING BONDING ENHANCEMENT LAYER AND METHOD OF FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING BONDING ENHANCEMENT LAYER AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20220406740A1

    公开(公告)日：2022-12-22

    申请号：US17544081

    申请日：2021-12-07

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taeyeong KIM ,  Taeseong KIM ,  Kwangjin MOON ,  Hyungjun JEON

    IPC分类号： H01L23/00 ,  H01L27/146 ,  H01L23/488

    摘要： A semiconductor device including a first structure including a first dielectric layer and a first conductive pattern in the first dielectric layer, the first conductive pattern including a first conductive material and a first bonding enhancement material; a second structure including a second dielectric layer and a second conductive pattern in the second dielectric layer, the second dielectric layer directly contacting the first dielectric layer, the second conductive pattern directly contacting the first conductive pattern; and a first bonding enhancement layer between the first conductive pattern and the second dielectric layer, wherein the first bonding enhancement layer includes the first bonding enhancement material or a material of the second dielectric layer, and the first bonding enhancement material includes a material having a higher bonding force to the material of the second dielectric layer than a bonding force of the first conductive material to the material of the second dielectric layer.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING THROUGH ELECTRODE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 有权

    公开(公告)号：US20220367321A1

    公开(公告)日：2022-11-17

    申请号：US17713421

    申请日：2022-04-05

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hyungjun JEON ,  Kwangjin MOON ,  Myungjoo PARK ,  Hakseung LEE ,  Sonkwan HWANG

    IPC分类号： H01L23/48 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00

    摘要： A semiconductor device includes front and back side structures on first and second surfaces of a substrate, respectively, and first and second through electrodes penetrating the substrate. The front side structure includes a circuit device, a first front side conductive pattern at a first level, a second front side conductive pattern at a second level, a lower insulating structure, and first to third insulating structures. The back side structure includes a first and a second back side conductive pattern on the same level. The first through electrode contacts the first back side conductive pattern and the first front side conductive pattern. The second through electrode contacts the second back side conductive pattern and the second front side conductive pattern. The first front side conductive pattern penetrates the second insulating structure and at least a portion of the third insulating structure.

    SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE
    6.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING THROUGH VIA STRUCTURE 有权

    公开(公告)号：US20220310485A1

    公开(公告)日：2022-09-29

    申请号：US17514218

    申请日：2021-10-29

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sonkwan HWANG ,  Taeseong KIM ,  Hoonjoo NA ,  Kwangjin MOON ,  Hyungjun JEON

    IPC分类号： H01L23/48 ,  H01L23/528 ,  H01L27/088 ,  H01L25/065 ,  H01L21/768

    摘要： A semiconductor device including a semiconductor substrate, an integrated circuit layer on the semiconductor substrate, first to nth metal wiring layers (where n is a positive integer) sequentially stacked on the semiconductor substrate and the integrated circuit layer, a first through via structure extending in a vertical direction toward the semiconductor substrate from a first via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate, and a second through via structure being apart from the first through via structure, extending in a vertical direction toward the semiconductor substrate from a second via connection metal wiring layer, which is one of the second to nth metal wiring layers other than the first metal wiring layer, and passing through the semiconductor substrate may be provided.