- 专利标题: INTEGRATED CIRCUIT INCLUDING STANDARD CELL AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT
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申请号: US17225773申请日: 2021-04-08
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公开(公告)号: US20210334449A1公开(公告)日: 2021-10-28
- 发明人: Jisu Yu , Jaeho Park , Sanghoon Baek , Hyeongyu You , Seungyoung Lee , Seungman Lim
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2020-0049484 20200423
- 主分类号: G06F30/398
- IPC分类号: G06F30/398 ; H01L23/528 ; H01L29/423 ; G06F30/392 ; G06F30/3953
摘要:
A method includes placing standard cells based on a standard cell library and generating layout data, and placing a filler cell selected from among a first type filler cell and a second type filler cell by using the layout data. The filler cell is placed based on a density of a pattern formed in the standard cell. The standard cell library includes data defining the first and second type filler cells. A density of a contact formed on an active region of the second type filler cell to contact the active region of the second type filler cell is lower than a density of a contact formed on an active region of a first type filler cell to contact the active region of the first type filler cell.
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