发明申请
- 专利标题： ETCHING METHOD
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申请号： US17277681申请日： 2019-09-25
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公开(公告)号： US20210351040A1公开(公告)日： 2021-11-11
- 发明人: Tadashi MITSUNARI , Naotaka NORO , Tsuyoshi MORIYA
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Minato-ku, Tokyo
- 优先权： JP2018-183319 20180928
- 国际申请： PCT/JP2019/037634 WO 20190925
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.
公开/授权文献
- US11721557B2 Etching method 公开/授权日：2023-08-08
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