公开(公告)号：US20240240324A1

公开(公告)日：2024-07-18

申请号：US18615192

申请日：2024-04-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru HORI ,  Makoto SEKINE ,  Hirotsugu SUGIURA ,  Tsuyoshi MORIYA ,  Satoshi TANAKA ,  Yoshinori MORISADA

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US20210351040A1

公开(公告)日：2021-11-11

申请号：US17277681

申请日：2019-09-25

Applicant: Tokyo Electron Limited

Inventor： Tadashi MITSUNARI ,  Naotaka NORO ,  Tsuyoshi MORIYA

IPC: H01L21/311

Abstract: The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

公开(公告)号：US20180158671A1

公开(公告)日：2018-06-07

申请号：US15835157

申请日：2017-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ayuta SUZUKI ,  Kosuke YAMAMOTO ,  Kazuyoshi MATSUZAKI ,  Munehito KAGAYA ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Atsushi KUBO

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/448 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/448 ,  C23C16/45525 ,  C23C16/45565 ,  C23C16/4582 ,  G05D16/00 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67017 ,  H01L21/68742

Abstract: A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

公开(公告)号：US20130255881A1

公开(公告)日：2013-10-03

申请号：US13901673

申请日：2013-05-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kouji MITSUHASHI ,  Hiroyuki NAKAYAMA ,  Nobuyuki NAGAYAMA ,  Tsuyoshi MORIYA ,  Hiroshi NAGAIKE

IPC: H05H1/24

CPC classification number: H05H1/24 ,  C23C16/4404 ,  H01J37/32477 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/31544 ,  Y10T428/31663 ,  Y10T428/31721

Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Abstract translation: 等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。 该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。 此外，膜的至少一部分被树脂密封。

公开(公告)号：US20240331977A1

公开(公告)日：2024-10-03

申请号：US18671410

申请日：2024-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32174 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

公开(公告)号：US20210301402A1

公开(公告)日：2021-09-30

申请号：US17265288

申请日：2019-07-29

Applicant: Tokyo Electron Limited

Inventor： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yoshinori MORISADA ,  Naotaka NORO ,  Munehito KAGAYA ,  Satoshi TANAKA

IPC: C23C16/52 ,  C23C16/50 ,  C23C16/455

Abstract: A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

公开(公告)号：US20190385815A1

公开(公告)日：2019-12-19

申请号：US16431565

申请日：2019-06-04

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01L21/67

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20170032983A1

公开(公告)日：2017-02-02

申请号：US15220653

申请日：2016-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koshi MUTA ,  Tsuyoshi MORIYA ,  Takuya MORI ,  Kazuhiro TAKESHITA ,  Tomonori ESAKI ,  Kouichi MIZUNAGA ,  Masataka TANAKA ,  Kouzou KANAGAWA ,  Keigo NAKANO

IPC: H01L21/67 ,  G03F7/16

CPC classification number: G03F7/16 ,  G03F7/168 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67748

Abstract: A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.

Abstract translation: 在处理容器的内表面上形成热催化剂层并加热。 因此，当从晶片W上的涂膜升华并接收在处理容器内的升华达到热催化层附近时，通过热催化层的热活化来分解和去除升华。 在移除附着在透光窗口上的升华中，在其表面上形成有热催化层的清洁基板被运送到处理容器中并使其接近透光窗。 此后，加热清洁基板，使得附着在透光窗的表面上的升华被去除。

公开(公告)号：US20130240479A1

公开(公告)日：2013-09-19

申请号：US13890529

申请日：2013-05-09

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi MORIYA ,  Kenichi Kataoka ,  Shigeru Senzaki ,  Youichi Shimanuki ,  Kazuhiko Kano ,  Yu Wamura ,  Song yun Kang ,  Eiichi Nishimura

IPC: B01D67/00

CPC classification number: B01D67/0023 ,  B01D61/025 ,  B01D67/0034 ,  B01D67/0062 ,  B01D69/10 ,  B01D71/022 ,  B01D71/024 ,  B01D2323/225 ,  B01D2323/24 ,  B01D2323/283 ,  B01D2325/02 ,  B01D2325/08 ,  B01D2325/48 ,  Y10T156/10

Abstract: To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

Abstract translation: 提供一种生产可以简化提供清水或淡水的过程的过滤器的方法。 通过使用形成在基板1的表面上并且具有许多开口以暴露表面部分的掩模膜来蚀刻硅基板1，在基板1中形成大约直径为100nm的许多圆形孔2。 通过将二氧化硅膜3还原的圆形孔2的开口附近的直径部分4通过在圆形孔2的内表面上沉积二氧化硅膜3而调节为1nm〜100nm。

公开(公告)号：US20240194507A1

公开(公告)日：2024-06-13

申请号：US18585466

申请日：2024-02-23

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi MORIYA ,  Takayuki YAMAGISHI ,  Haruhiko FURUYA ,  Kiyoshi MORI

IPC: H01L21/67 ,  G06N20/00 ,  H01L21/687

CPC classification number: H01L21/67253 ,  G06N20/00 ,  H01L21/67207 ,  H01L21/67259 ,  H01L21/68764

Abstract: The storage is configured to store model data generated based on data including, in patterns, a processing condition for substrate processing, an attitude of a movable part that affects a processing result of the substrate processing, and the processing result of the substrate processing. The processing controller is configured to use the model data stored in the storage to control the substrate processing, including control of the processing condition for the substrate processing and control of the attitude of the movable part, according to a condition to be satisfied by the processing result of the substrate processing.