公开(公告)号：US20210351040A1

公开(公告)日：2021-11-11

申请号：US17277681

申请日：2019-09-25

申请人： Tokyo Electron Limited

发明人： Tadashi MITSUNARI ,  Naotaka NORO ,  Tsuyoshi MORIYA

IPC分类号： H01L21/311

摘要： The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

公开(公告)号：US20180158671A1

公开(公告)日：2018-06-07

申请号：US15835157

申请日：2017-12-07

申请人： TOKYO ELECTRON LIMITED

发明人： Ayuta SUZUKI ,  Kosuke YAMAMOTO ,  Kazuyoshi MATSUZAKI ,  Munehito KAGAYA ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Atsushi KUBO

IPC分类号： H01L21/02 ,  H01L21/67 ,  C23C16/448 ,  C23C16/458 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/448 ,  C23C16/45525 ,  C23C16/45565 ,  C23C16/4582 ,  G05D16/00 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67017 ,  H01L21/68742

摘要： A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

公开(公告)号：US20130255881A1

公开(公告)日：2013-10-03

申请号：US13901673

申请日：2013-05-24

申请人： TOKYO ELECTRON LIMITED

发明人： Kouji MITSUHASHI ,  Hiroyuki NAKAYAMA ,  Nobuyuki NAGAYAMA ,  Tsuyoshi MORIYA ,  Hiroshi NAGAIKE

IPC分类号： H05H1/24

CPC分类号： H05H1/24 ,  C23C16/4404 ,  H01J37/32477 ,  Y10T428/249969 ,  Y10T428/24997 ,  Y10T428/31544 ,  Y10T428/31663 ,  Y10T428/31721

摘要： An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

摘要翻译： 等离子体处理容器的内部构件包括基材和通过在基材的表面上热喷涂陶瓷而形成的膜。 该膜由包括选自B，Mg，Al，Si，Ca，Cr，Y，Zr，Ta，Ce和Nd中的至少一种元素的陶瓷形成。 此外，膜的至少一部分被树脂密封。

公开(公告)号：US20210301402A1

公开(公告)日：2021-09-30

申请号：US17265288

申请日：2019-07-29

申请人： Tokyo Electron Limited

发明人： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Tadashi MITSUNARI ,  Shinya IWASHITA ,  Yoshinori MORISADA ,  Naotaka NORO ,  Munehito KAGAYA ,  Satoshi TANAKA

IPC分类号： C23C16/52 ,  C23C16/50 ,  C23C16/455

摘要： A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

公开(公告)号：US20190385815A1

公开(公告)日：2019-12-19

申请号：US16431565

申请日：2019-06-04

申请人： Tokyo Electron Limited

发明人： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC分类号： H01J37/32 ,  H01L21/67

摘要： A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20220010424A1

公开(公告)日：2022-01-13

申请号：US17291930

申请日：2019-10-30

申请人： TOKYO ELECTRON LIMITED

发明人： Yusuke SUZUKI ,  Tsuyoshi MORIYA ,  Kazuhide HASEBE ,  Atsushi ENDO ,  Satoshi TANAKA

IPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/308 ,  H01L21/66

摘要： A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

公开(公告)号：US20130148817A1

公开(公告)日：2013-06-13

申请号：US13708048

申请日：2012-12-07

申请人： TOKYO ELECTRON LIMITED

发明人： Tsuyoshi MORIYA ,  Nobutoshi TERASAWA ,  Yuki KATAOKA ,  Masahiro YATABE ,  Shirou ARAKI

IPC分类号： H04R29/00

CPC分类号： H04R29/00

摘要： An abnormality detection apparatus for a periodic driving system includes a detection unit; a data obtaining unit for time series data from the detected sound; a determinism derivation unit configured to derive a plurality of values representing determinism providing an indicator of whether the time series data is deterministic or stochastic or a plurality of intermediate variations in a calculation process of the values representing determinism at a predetermined interval from the time series data; a probability distribution calculation unit. The abnormality detection apparatus further includes a determination unit configured to determine existence or non-existence of abnormality in the periodic driving system based on the probability distribution of the values representing determinism or the intermediate variations.

摘要翻译： 一种用于周期性驱动系统的异常检测装置，包括检测单元; 数据获取单元，用于根据检测到的声音的时间序列数据; 确定性推导单元，被配置为导出表示确定性的多个值，所述确定性提供时间序列数据是确定性还是随机性的指示符，或者表示从时间序列数据以预定间隔表示确定性的值的计算处理中的多个中间变化 ; 概率分布计算单元。 异常检测装置还包括：判定部，其基于代表确定性或中间变化的值的概率分布，来确定周期性驱动系统中的异常的存在或不存在。

公开(公告)号：US20170032983A1

公开(公告)日：2017-02-02

申请号：US15220653

申请日：2016-07-27

申请人： TOKYO ELECTRON LIMITED

发明人： Koshi MUTA ,  Tsuyoshi MORIYA ,  Takuya MORI ,  Kazuhiro TAKESHITA ,  Tomonori ESAKI ,  Kouichi MIZUNAGA ,  Masataka TANAKA ,  Kouzou KANAGAWA ,  Keigo NAKANO

IPC分类号： H01L21/67 ,  G03F7/16

CPC分类号： G03F7/16 ,  G03F7/168 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67748

摘要： A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.

摘要翻译： 在处理容器的内表面上形成热催化剂层并加热。 因此，当从晶片W上的涂膜升华并接收在处理容器内的升华达到热催化层附近时，通过热催化层的热活化来分解和去除升华。 在移除附着在透光窗口上的升华中，在其表面上形成有热催化层的清洁基板被运送到处理容器中并使其接近透光窗。 此后，加热清洁基板，使得附着在透光窗的表面上的升华被去除。

公开(公告)号：US20130240479A1

公开(公告)日：2013-09-19

申请号：US13890529

申请日：2013-05-09

申请人： Tokyo Electron Limited

发明人： Tsuyoshi MORIYA ,  Kenichi Kataoka ,  Shigeru Senzaki ,  Youichi Shimanuki ,  Kazuhiko Kano ,  Yu Wamura ,  Song yun Kang ,  Eiichi Nishimura

IPC分类号： B01D67/00

CPC分类号： B01D67/0023 ,  B01D61/025 ,  B01D67/0034 ,  B01D67/0062 ,  B01D69/10 ,  B01D71/022 ,  B01D71/024 ,  B01D2323/225 ,  B01D2323/24 ,  B01D2323/283 ,  B01D2325/02 ,  B01D2325/08 ,  B01D2325/48 ,  Y10T156/10

摘要： To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

摘要翻译： 提供一种生产可以简化提供清水或淡水的过程的过滤器的方法。 通过使用形成在基板1的表面上并且具有许多开口以暴露表面部分的掩模膜来蚀刻硅基板1，在基板1中形成大约直径为100nm的许多圆形孔2。 通过将二氧化硅膜3还原的圆形孔2的开口附近的直径部分4通过在圆形孔2的内表面上沉积二氧化硅膜3而调节为1nm〜100nm。

公开(公告)号：US20230051432A1

公开(公告)日：2023-02-16

申请号：US17974193

申请日：2022-10-26

申请人： Tokyo Electron Limited

发明人： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC分类号： H01J37/32 ,  H01L21/67

摘要： A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.