- 专利标题： SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD FOR MANUFACTURING SAME
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申请号： US17407851申请日： 2021-08-20
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公开(公告)号： US20210384337A1公开(公告)日： 2021-12-09
- 发明人: Daimotsu KATO , Yosuke KAJIWARA , Akira MUKAI , Aya SHINDOME , Hiroshi ONO , Masahiko KURAGUCHI
- 申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 申请人地址： JP Minato-ku; JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人地址： JP Minato-ku; JP Minato-ku
- 优先权： JP2019-046606 20190314
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; H01L29/66 ; H01L29/423
摘要：
According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
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