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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200373422A1

    公开(公告)日：2020-11-26

    申请号：US16799901

    申请日：2020-02-25

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Masahiko KURAGUCHI ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Hiroshi ONO ,  Daimotsu KATO ,  Akira MUKAI

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/423 ,  H01L29/66

    摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200220002A1

    公开(公告)日：2020-07-09

    申请号：US16565715

    申请日：2019-09-10

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Aya SHINDOME ,  Masahiko Kuraguchi

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/06

    摘要： According to one embodiment, a semiconductor device includes a first electrode extending along a first direction, a second electrode including a portion extending along the first direction, a third electrode extending along the first direction, a first member, first and second semiconductor regions, and a conductive portion. A position of the second electrode in a second direction is between the third electrode and the first electrode in the second direction crossing the first direction. A distance along the second direction between the third and second electrodes is shorter than a distance along the second direction between the second and first electrodes. The first member includes first and second regions. A conductivity of the second region is lower than a conductivity of the first region. The first semiconductor region includes Alx1Ga1-x1N. The second semiconductor region includes Alx2Ga1-x2N. A conductive portion is electrically connected to the first electrode.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200335587A1

    公开(公告)日：2020-10-22

    申请号：US16787351

    申请日：2020-02-11

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Hiroshi ONO ,  Akira MUKAI ,  Yosuke KAJIWARA ,  Daimotsu KATO ,  Aya SHINDOME ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/205 ,  H01L29/207 ,  H01L29/20 ,  H01L29/778 ,  H01L29/423 ,  H01L29/51 ,  H01L29/40 ,  H01L23/29

    摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190288081A1

    公开(公告)日：2019-09-19

    申请号：US16056917

    申请日：2018-08-07

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Aya SHINDOME ,  Masahiko KURAGUCHI ,  Tatsuo SHIMIZU

    IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L29/423

    摘要： According to one embodiment, a semiconductor device includes first and second semiconductor regions, first to third electrodes, a conductive portion, first and second insulating layers. The first, second and third electrodes are separated from the first semiconductor region. The conductive portion is separated from the first semiconductor region. The second semiconductor region includes first to third partial regions. The first and second partial regions are electrically connected to the first and second electrodes, respectively. The third partial region is positioned between the second portion and the first semiconductor region. A portion of the first insulating layer is provided between the first portion and the first semiconductor region. The second insulating layer includes first and second insulating portions. The first insulating portion is positioned between the second portion and the third partial region. The second insulating portion is positioned between the conductive portion and the second semiconductor region.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220393006A1

    公开(公告)日：2022-12-08

    申请号：US17590866

    申请日：2022-02-02

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Aya SHINDOME ,  Yosuke KAJIWARA ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

    摘要： According to one embodiment, a semiconductor device includes first, second, third electrodes, first, and second semiconductor regions, a first conductive member, and an insulating member. The third electrode is between the first and second electrodes. The first semiconductor region includes first to sixth partial regions. The second semiconductor region includes first to third semiconductor portions. The first conductive member is electrically connected with a first one of the first and third electrodes. The first conductive member includes a first conductive end portion. The insulating member includes first and second nitride regions. The second semiconductor portion is between the fifth partial region and the first nitride region. The third semiconductor portion is between the sixth partial region and the second nitride region. The first nitride region includes a first nitride end portion. The first nitride end portion is in contact with the second semiconductor region.