Invention Application
- Patent Title: FLOWABLE FILM FORMATION AND TREATMENTS
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Application No.: US16932801Application Date: 2020-07-19
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Publication No.: US20220020594A1Publication Date: 2022-01-20
- Inventor: Shishi Jiang , Praket Prakash Jha , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02

Abstract:
Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may define a feature within the semiconductor substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. A bias power may be applied to the substrate support from a bias power source. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.
Public/Granted literature
- US11615966B2 Flowable film formation and treatments Public/Granted day:2023-03-28
Information query
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