Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US17185102Application Date: 2021-02-25
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Publication No.: US20220020753A1Publication Date: 2022-01-20
- Inventor: Sung Hun JUNG , Heon Jong SHIN , Min Chan GWAK , Sung Moon LEE , Jeong Ki HWANG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0087200 20200715
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L23/528 ; H01L21/768

Abstract:
A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.
Public/Granted literature
- US11778801B2 Semiconductor device having a node capping pattern and a gate capping pattern Public/Granted day:2023-10-03
Information query
IPC分类: