- 专利标题： Three-Dimensional Memory Device and Method
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申请号： US17018232申请日： 2020-09-11
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公开(公告)号： US20220020771A1公开(公告)日： 2022-01-20
- 发明人: Feng-Cheng Yang , Meng-Han Lin , Sheng-Chen Wang , Han-Jong Chia , Chung-Te Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/11597
- IPC分类号： H01L27/11597 ; H01L27/1159 ; H01L23/522 ; H01L21/3213 ; H01L21/768
摘要：
In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.
公开/授权文献
- US11355516B2 Three-dimensional memory device and method 公开/授权日：2022-06-07