Invention Application
- Patent Title: Selective Etch Process Using Hydrofluoric Acid and Ozone Gases
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Application No.: US17532143Application Date: 2021-11-22
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Publication No.: US20220084839A1Publication Date: 2022-03-17
- Inventor: Qi Zhang , Haichun Yang , Hua Chung , Ting Xie , Michael X. Yang
- Applicant: Mattson Technology, Inc. , Beijing E-Town Semiconductor Technology, Co., LTD
- Applicant Address: US CA Fremont; CN Beijing
- Assignee: Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- Current Assignee: Mattson Technology, Inc.,Beijing E-Town Semiconductor Technology, Co., LTD
- Current Assignee Address: US CA Fremont; CN Beijing
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311 ; H01L21/3065
Abstract:
Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.
Public/Granted literature
- US11791166B2 Selective etch process using hydrofluoric acid and ozone gases Public/Granted day:2023-10-17
Information query
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