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    METHODS OF PROCESSING WORKPIECES USING ORGANIC RADICALS
    2.
    发明公开
    METHODS OF PROCESSING WORKPIECES USING ORGANIC RADICALS 审中-公开

    公开(公告)号：US20240165659A1

    公开(公告)日：2024-05-23

    申请号：US18514719

    申请日：2023-11-20

    申请人： Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

    发明人： Ting Xie ,  Binhui Hu ,  Haichun Yang

    IPC分类号： B05D1/00 ,  B05D7/24

    CPC分类号： B05D1/62 ,  B05D7/24

    摘要： Processes treating a workpiece are provided. In one example implementation, a method can include performing an organic radical treatment process on a workpiece. The workpiece includes a photoresist material and a semiconductor material. The organic radical treatment process can include generating one or more species in a first chamber. The treatment process can include flowing one or more hydrocarbon molecules at a flow rate of about 100 sccm to about 15000 sccm into the one or more species to create a mixture. The mixture can include one or more organic radicals. The treatment process can include exposing the workpiece to the mixture in a second chamber. The mixture etches the photoresist material at an etch rate that is greater than an etch rate of the semiconductor material. Devices and systems for processing workpieces are also provided.

    Silicon oxide selective dry etch process
    7.
    发明授权
    Silicon oxide selective dry etch process 有权

    公开(公告)号：US10692730B1

    公开(公告)日：2020-06-23

    申请号：US16557346

    申请日：2019-08-30

    申请人： Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

    发明人： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

    IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/3213

    摘要： Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

    Silicon oxide selective dry etch process
    9.
    发明授权
    Silicon oxide selective dry etch process 有权

    公开(公告)号：US11251050B2

    公开(公告)日：2022-02-15

    申请号：US16904669

    申请日：2020-06-18

    申请人： Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

    发明人： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Haichun Yang

    IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/3213

    摘要： Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.