Invention Application
- Patent Title: HIGH CONDUCTANCE PROCESS KIT
-
Application No.: US17023987Application Date: 2020-09-17
-
Publication No.: US20220084845A1Publication Date: 2022-03-17
- Inventor: Samartha Subramanya , Dmitry Lubomirsky , Mehmet Tugrul Samir , Lala Zhu , Martin Y. Choy , Son T. Nguyen , Pranav Gopal
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B05B1/18 ; C23C16/455 ; H01L21/3065 ; H01J37/305

Abstract:
Exemplary semiconductor processing chambers may include showerhead. The chambers may include a pedestal configured to support a semiconductor substrate, where the showerhead and pedestal at least partially define a processing region within the semiconductor chamber. The chamber may include a spacer characterized by a first surface in contact with the showerhead and a second surface opposite the first surface. The chamber may include a pumping liner characterized by a first surface in contact with the spacer and a second surface opposite the first surface. The pumping liner may define a plurality of apertures within the first surface of the pumping liner.
Information query
IPC分类: