Invention Application
- Patent Title: METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE
-
Application No.: US17540257Application Date: 2021-12-02
-
Publication No.: US20220093406A1Publication Date: 2022-03-24
- Inventor: Yuki IIJIMA , Toru HISAMATSU , Kae KUMAGAI
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2019-122068 20190628
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; G03F7/20 ; H01L21/311 ; H01L21/768 ; H01L21/3213 ; H01L21/67
Abstract:
A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
Public/Granted literature
- US12074009B2 Apparatus for processing a substrate Public/Granted day:2024-08-27
Information query
IPC分类:
