- 专利标题： METHODS AND APPARATUS FOR SEAM REDUCTION OR ELIMINATION
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申请号： US17490530申请日： 2021-09-30
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公开(公告)号： US20220108916A1公开(公告)日： 2022-04-07
- 发明人: Yixiong YANG , Seshadri GANGULI , Srinivas GANDIKOTA , Yong YANG , Jacqueline S. WRENCH , Luping LI
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/285 ; H01L21/477
摘要：
A method of forming a contact structure in a semiconductor device having a feature includes forming a barrier layer in the feature, wherein the barrier layer is TiN; and forming a metal layer in the feature and over the barrier layer, wherein the metal layer is at least one of aluminum (Al), ruthenium (Ru), or molybdenum (Mo).
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