公开(公告)号：US20220108916A1

公开(公告)日：2022-04-07

申请号：US17490530

申请日：2021-09-30

申请人： Applied Materials, Inc.

发明人： Yixiong YANG ,  Seshadri GANGULI ,  Srinivas GANDIKOTA ,  Yong YANG ,  Jacqueline S. WRENCH ,  Luping LI

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/477

摘要： A method of forming a contact structure in a semiconductor device having a feature includes forming a barrier layer in the feature, wherein the barrier layer is TiN; and forming a metal layer in the feature and over the barrier layer, wherein the metal layer is at least one of aluminum (Al), ruthenium (Ru), or molybdenum (Mo).

公开(公告)号：US20220165852A1

公开(公告)日：2022-05-26

申请号：US17529948

申请日：2021-11-18

申请人： Applied Materials, Inc.

发明人： Srinivas GANDIKOTA ,  Yixiong YANG ,  Jacqueline S. WRENCH ,  Luping LI ,  Yong YANG ,  Seshadri GANGULI

IPC分类号： H01L29/40 ,  H01L29/49 ,  C23C28/02 ,  C23C28/00 ,  C23C16/455

摘要： A method of filling a feature in a semiconductor structure includes forming a barrier layer in the feature by one of atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD); wherein the barrier layer is one of cobalt (Co), molybdenum (Mo), molybdenum nitride (MoN) plus Mo, titanium (Ti), titanium aluminum carbide (TiAlC), or titanium nitride (TiN); and forming a metal layer in the feature and over the barrier layer by one of ALD or CVD; wherein the metal layer is one of aluminum (Al), Co, Mo, ruthenium (Ru), or tungsten (W).