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14 条记录 (耗时 0.015 秒)

    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
    2.
    发明申请
    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 有权

    公开(公告)号：US20220298625A1

    公开(公告)日：2022-09-22

    申请号：US17834633

    申请日：2022-06-07

    申请人： Applied Materials, Inc.

    发明人： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

    IPC分类号： C23C16/16 ,  H01L21/324 ,  H01L21/768 ,  C23C16/02 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50

    摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

    POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS
    3.
    发明申请
    POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS 有权
    用于CVD钴薄膜的后沉积处理

    公开(公告)号：US20140011354A1

    公开(公告)日：2014-01-09

    申请号：US13956969

    申请日：2013-08-01

    申请人： Applied Materials, Inc.

    发明人： Yu LEI ,  Xinyu FU ,  Anantha SUBRAMANI ,  Seshadri GANGULI ,  Srinivas GANDIKOTA

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

    摘要翻译： 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

    METHODS FOR ETCHING VIA ATOMIC LAYER DEPOSITION (ALD) CYCLES
    5.
    发明申请
    METHODS FOR ETCHING VIA ATOMIC LAYER DEPOSITION (ALD) CYCLES 有权
    通过原子层沉积（ALD）循环进行蚀刻的方法

    公开(公告)号：US20160276214A1

    公开(公告)日：2016-09-22

    申请号：US14717740

    申请日：2015-05-20

    申请人： APPLIED MATERIALS, INC.

    发明人： Xinyu FU ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Seshadri GANGULI ,  Guoqiang JIAN ,  Yixiong YANG ,  Vikash BANTHIA ,  Jonathan BAKKE

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76816 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879

    摘要： Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCIx) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

    摘要翻译： 本发明提供蚀刻基板的方法。 在一些实施例中，用于蚀刻设置在处理室的处理体积内的衬底的方法包括：（a）将设置在衬底顶部的第一层暴露于包含氯化钨（WCIx）的第一气体第一时间段 第一压力，其中x为5或6; （b）使用惰性气体吹扫第一气体的处理量第二段; （c）在清洗第一气体的处理容积之后，将衬底暴露于含氢气体持续第三时间以蚀刻第一层; 和（d）使用惰性气体净化含氢气体的处理量第四个时间段。

    METHODS FOR SELECTIVE DEPOSITION OF METAL SILICIDES VIA ATOMIC LAYER DEPOSITION CYCLES
    8.
    发明申请
    METHODS FOR SELECTIVE DEPOSITION OF METAL SILICIDES VIA ATOMIC LAYER DEPOSITION CYCLES 审中-公开
    通过原子层沉积循环选择性沉积金属硅的方法

    公开(公告)号：US20160322229A1

    公开(公告)日：2016-11-03

    申请号：US14790862

    申请日：2015-07-02

    申请人： APPLIED MATERIALS, INC.

    发明人： Seshadri GANGULI ,  Yixiong YANG ,  Bhushan N. ZOPE ,  Xinyu FU ,  Avgerinos V. GELATOS ,  Guoqiang JIAN ,  Bo ZHENG

    IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/324

    CPC分类号： H01L21/28518 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/53238 ,  H01L23/53266

    摘要： Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

    摘要翻译： 本文提供了选择性沉积金属硅化物层的方法。 在一些实施例中，选择性沉积金属硅化物层的方法包括：（a）向处理室提供具有第一层的衬底，其中第一层包括第一表面和形成在第一表面中的特征，包括限定的开口 通过一个或多个侧壁和底表面，其中所述侧壁包括氧化硅或氮化硅之一，并且其中所述底表面包括硅或锗中的至少一种; （b）将衬底暴露于包含金属卤化物的前体气体; （c）使用惰性气体从处理室吹扫前体气体; （d）将衬底暴露于含硅气体; （e）使用惰性气体从处理室清洗含硅气体; （f）重复（b） - （e）沿着底表面选择性地沉积金属硅化物至预定厚度; 和（g）在沉积金属硅化物层之后退火衬底。

    METHOD FOR FORMATION OF CONFORMAL ALD SIO2 FILMS
    10.
    发明公开
    METHOD FOR FORMATION OF CONFORMAL ALD SIO2 FILMS 审中-公开

    公开(公告)号：US20230416909A1

    公开(公告)日：2023-12-28

    申请号：US18336157

    申请日：2023-06-16

    申请人： Applied Materials, Inc.

    发明人： Geetika BAJAJ ,  Seshadri GANGULI ,  Gopi Chandran RAMACHANDRAN ,  Srinivas GANDIKOTA

    IPC分类号： C23C16/40 ,  C23C16/04

    CPC分类号： C23C16/402 ,  C23C16/045

    摘要： Embodiments of the disclosure provide a method of forming a dielectric film in trenches of a substrate. The utilization of the ALD process and introduction of an inhibitor material onto features defining the trenches and into the trenches provides for suppression of forming the dielectric film near the top surface of the features in the trenches. The dielectric film is formed via an ALD process. The ALD process includes sequentially exposing the substrate to an inhibitor material, a first precursor, a purge gas, an oxygen-containing precursor, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the dielectric film.