CHEMICAL MECHANICAL POLISHING PAD HAVING PATTERN SUBSTRATE
Abstract:
The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.
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