Invention Application
- Patent Title: CHEMICAL MECHANICAL POLISHING PAD HAVING PATTERN SUBSTRATE
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Application No.: US17536358Application Date: 2021-11-29
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Publication No.: US20220134507A1Publication Date: 2022-05-05
- Inventor: Hyoung Jae KIM , Do Yeon KIM , Tae Kyung LEE , Pil Sik KANG
- Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Applicant Address: KR Cheonan-Si Chungcheongnam-do
- Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
- Current Assignee Address: KR Cheonan-Si Chungcheongnam-do
- Priority: KR10-2019-0063360 20190529,KR10-2019-0063372 20190529,KR10-2019-0063380 20190529,KR10-2020-0055933 20200511
- Main IPC: B24B37/26
- IPC: B24B37/26 ; B24B37/04

Abstract:
The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.
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