公开(公告)号：US20150375317A1

公开(公告)日：2015-12-31

申请号：US14767539

申请日：2013-11-25

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Hyung Ho JO ,  Sang Jik LEE ,  Do Yeon KIM ,  Tae Kyung LEE ,  Chul Jin PARK

IPC: B23D57/00 ,  B28D7/04 ,  B28D5/04

CPC classification number: B23D57/0046 ,  B28D5/045 ,  B28D7/04

Abstract: Provided is a wire saw (1) that cuts an ingot (I) while swinging the ingot. The wire saw (1) includes a first driving block (100), a second driving block (110), and an ingot holder (120). When the first driving block (100) moves, the second driving block (110) moves in a direction perpendicular to a moving direction of the first driving block (100), and simultaneously the ingot holder (120) is swung. The ingot holder (120) is transferred to a z-axial direction in which the ingot is cut by a lifting block (73), and the lifting block (73) moves independently of the first or second driving block (100 or 1110). Thus, the ingot (I) can be swung separately from the lifting block (73), and be inhibited from moving left and right. Since only the first driving block (100) is controlled, easy control and a simple structure are provided.

Abstract translation: 提供了在摆动锭的同时切割锭（I）的线锯（1）。 线锯（1）包括第一驱动块（100），第二驱动块（110）和锭块（120）。 当第一驱动块（100）移动时，第二驱动块（110）沿与第一驱动块（100）的移动方向垂直的方向移动，同时锭块保持架（120）摆动。 锭保持器（120）被转移到z轴方向，在该轴向方向上，铸锭被提升块（73）切割，提升块（73）独立于第一或第二驱动块（100或1110）移动。 因此，锭（I）可以与提升块（73）分开地摆动，并且被禁止左右移动。 由于只有第一驱动块（100）被控制，所以提供了容易的控制和简单的结构。

公开(公告)号：US20230226660A1

公开(公告)日：2023-07-20

申请号：US17928617

申请日：2021-07-10

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Do Yeon KIM ,  Tae Kyung LEE

IPC: B24B37/22 ,  B24B37/04 ,  B24D18/00

CPC classification number: B24B37/22 ,  B24B37/04 ,  B24D18/00

Abstract: Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm2 to 50.0 mm/mm2.

公开(公告)号：US20220134507A1

公开(公告)日：2022-05-05

申请号：US17536358

申请日：2021-11-29

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Do Yeon KIM ,  Tae Kyung LEE ,  Pil Sik KANG

IPC: B24B37/26 ,  B24B37/04

Abstract: The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.

公开(公告)号：US20220080550A1

公开(公告)日：2022-03-17

申请号：US17536100

申请日：2021-11-29

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Tae Kyung LEE ,  Do Yeon KIM ,  Pil Sik KANG

IPC: B24B37/26 ,  B24B37/22

Abstract: A polishing pad, a polishing device including the same, and a method of preparing a polishing pad are provided. The polishing pad includes a support layer, and a pattern layer disposed on one surface of the support layer, and the pattern layer includes a plurality of protrusion patterns spaced apart from each other on the support layer, and has a greater rigidity than a rigidity of the support layer.