公开(公告)号：US20220134507A1

公开(公告)日：2022-05-05

申请号：US17536358

申请日：2021-11-29

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Do Yeon KIM ,  Tae Kyung LEE ,  Pil Sik KANG

IPC: B24B37/26 ,  B24B37/04

Abstract: The present invention relates to a chemical mechanical polishing pad having a pattern structure. The configuration of the present invention provides a chemical mechanical polishing pad having a pattern structure including a polishing pad configured to polish a wafer placed thereon; and a plurality of figure units formed on the polishing pad and formed to protrude from an upper portion of the polishing pad. The figure units are formed to have a predetermined contact area ratio and a predetermined circumferential length per unit area which correspond to a target polishing characteristic.

公开(公告)号：US20220080550A1

公开(公告)日：2022-03-17

申请号：US17536100

申请日：2021-11-29

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Hyoung Jae KIM ,  Tae Kyung LEE ,  Do Yeon KIM ,  Pil Sik KANG

IPC: B24B37/26 ,  B24B37/22

Abstract: A polishing pad, a polishing device including the same, and a method of preparing a polishing pad are provided. The polishing pad includes a support layer, and a pattern layer disposed on one surface of the support layer, and the pattern layer includes a plurality of protrusion patterns spaced apart from each other on the support layer, and has a greater rigidity than a rigidity of the support layer.