Invention Application
- Patent Title: WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS
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Application No.: US17578259Application Date: 2022-01-18
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Publication No.: US20220140127A1Publication Date: 2022-05-05
- Inventor: Patrick MORROW , Kimin JUN , Il-Seok SON , Donald W. NELSON
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/14 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L29/417
Abstract:
An apparatus including a circuit structure including a first side including a device layer including a plurality of devices and an opposite second side; an electrically conductive contact coupled to one of the plurality of devices on the first side; and an electrically conductive interconnect disposed on the second side of the structure and coupled to the conductive contact. A method including forming a transistor device including a channel between a source and a drain and a gate electrode on the channel defining a first side of the device; forming an electrically conductive contact to one of the source and the drain from the first side; and forming an interconnect on a second side of the device, wherein the interconnect is coupled to the contact.
Public/Granted literature
- US12100761B2 Wrap-around source/drain method of making contacts for backside metals Public/Granted day:2024-09-24
Information query
IPC分类:
