- 专利标题： REFLECTIVE MASK AND FABRICATING METHOD THEREOF
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申请号： US17579433申请日： 2022-01-19
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公开(公告)号： US20220146924A1公开(公告)日： 2022-05-12
- 发明人: Tsiao-Chen WU , Pei-Cheng HSU
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G03F1/24
- IPC分类号： G03F1/24 ; G03F1/80 ; G03F1/40
摘要：
The prevent disclosure provides a reflective mask. In some embodiments, the reflective mask includes a substrate, a sp2-hybrid carbon layer, a reflective multilayer, and an absorption pattern. The sp2-hybrid carbon layer is over the substrate. The reflective multilayer is over the sp2-hybrid carbon layer. The absorption pattern is over the reflective multilayer.
公开/授权文献
- US11630386B2 Reflective mask and fabricating method thereof 公开/授权日：2023-04-18
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