A memory architecture for 3-dimensional thyristor cell arrays is disclosed. Thyristor memory cells are connected in a 3-dimensional cross-point array to form a bit line cluster. The bit line clusters are connected in parallel to sense amplifier and write circuits through multiplexer/demultiplexer circuits. Control circuits select one of the bit line clusters during a read or write operation while the non-selected bit line clusters are not activated to avoid disturbs and power consumption in the non-selected bit line clusters. The bit line clusters, multiplexer/demultiplexer circuits, and sense amplifier and write circuits from a memory array tile (MAT).