Invention Application
- Patent Title: METAL BASED HYDROGEN BARRIER
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Application No.: US17587525Application Date: 2022-01-28
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Publication No.: US20220157654A1Publication Date: 2022-05-19
- Inventor: Srinivas Gandikota , Steven C.H. Hung , Srinivas D. Nemani , Yixiong Yang , Susmit Singha Roy , Nikolaos Bekiaris
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48
Abstract:
A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
Public/Granted literature
- US12020982B2 Metal based hydrogen barrier Public/Granted day:2024-06-25
Information query
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