公开(公告)号：US20240194526A1

公开(公告)日：2024-06-13

申请号：US18581598

申请日：2024-02-20

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C.H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76864 ,  H01L21/76898 ,  H01L23/481

Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US11615984B2

公开(公告)日：2023-03-28

申请号：US16848784

申请日：2020-04-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Shi You ,  He Ren ,  Naomi Yoshida ,  Nikolaos Bekiaris ,  Mehul Naik ,  Martin Jay Seamons ,  Jingmei Liang ,  Mei-Yee Shek

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material.

公开(公告)号：US12020982B2

公开(公告)日：2024-06-25

申请号：US17587525

申请日：2022-01-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Steven C. H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76864 ,  H01L21/76898 ,  H01L23/481

Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US11043415B2

公开(公告)日：2021-06-22

申请号：US16564489

申请日：2019-09-09

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Wu ,  Nikolaos Bekiaris ,  Mehul B. Naik ,  Jin Hee Park ,  Mark Hyun Lee

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285 ,  H01L21/67

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

公开(公告)号：US20210111222A1

公开(公告)日：2021-04-15

申请号：US16653762

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-hua Li ,  Toshihiko Miyashita ,  Ellie Yieh ,  Srinivas D. Nemani ,  Seshadri Ramaswami ,  Nikolaos Bekiaris

IPC: H01L27/146

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.

公开(公告)号：US09711397B1

公开(公告)日：2017-07-18

申请号：US15140955

申请日：2016-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Nikolaos Bekiaris ,  Mehul Naik ,  Zhiyuan Wu

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76834 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76883 ,  H01L23/53209

Abstract: Resistance increase in Cobalt interconnects due to nitridation occurring during removal of surface oxide from Cobalt interconnects and deposition of Nitrogen-containing film on Cobalt interconnects is solved by a Hydrogen thermal anneal or plasma treatment. Removal of the Nitrogen is through a thin overlying layer which may be a dielectric barrier layer or an etch stop layer.

公开(公告)号：US11955333B2

公开(公告)日：2024-04-09

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro Tannos ,  Bhargav Sridhar Citla ,  Srinivas D. Nemani ,  Ellie Yieh ,  Joshua Alan Rubnitz ,  Erica Chen ,  Soham Sunjay Asrani ,  Nikolaos Bekiaris ,  Douglas Arthur Buchberger, Jr.

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/02326 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32174 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/02274 ,  H01J2237/20214 ,  H01J2237/3321

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US11901222B2

公开(公告)日：2024-02-13

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian Clemons ,  Nikolaos Bekiaris ,  Srinivas D. Nemani

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32009 ,  H01L21/02271 ,  H01J2237/3321

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US11101174B2

公开(公告)日：2021-08-24

申请号：US16653601

申请日：2019-10-15

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Nikolaos Bekiaris ,  Erica Chen ,  Mehul B. Naik

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/762 ,  H01L21/285 ,  H01L21/02 ,  H01L21/30 ,  H01L21/324 ,  H01L21/3213

Abstract: Methods for forming an interconnections structure on a substrate in a cluster processing system and thermal processing such interconnections structure are provided. In one embodiment, a method for a device structure for semiconductor devices includes forming a barrier layer in an opening formed in a material layer disposed on a substrate, forming an interface layer on the barrier layer, forming a gap filling layer on the interface layer, and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar.

公开(公告)号：US10438849B2

公开(公告)日：2019-10-08

申请号：US15137245

申请日：2016-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jie Zhou ,  Guannan Chen ,  Michael W. Stowell ,  Bencherki Mebarki ,  Mehul Naik ,  Srinivas D. Nemani ,  Nikolaos Bekiaris ,  Zhiyuan Wu

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.