- 专利标题： METAL BASED HYDROGEN BARRIER
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申请号： US17587525申请日： 2022-01-28
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公开(公告)号： US20220157654A1公开(公告)日： 2022-05-19
- 发明人: Srinivas Gandikota , Steven C.H. Hung , Srinivas D. Nemani , Yixiong Yang , Susmit Singha Roy , Nikolaos Bekiaris
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
公开/授权文献
- US12020982B2 Metal based hydrogen barrier 公开/授权日：2024-06-25
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