- 专利标题： Semiconductor Device and Method
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申请号： US17682739申请日： 2022-02-28
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公开(公告)号： US20220181490A1公开(公告)日： 2022-06-09
- 发明人: Jung-Hung Chang , Lo-Heng Chang , Zhi-Chang Lin , Shih-Cheng Chen , Kuo-Cheng Chiang , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/786 ; H01L21/02 ; H01L21/308 ; H01L21/3065 ; H01L21/311 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/66
摘要：
A method of independently forming source/drain regions in NMOS regions including nanosheet field-effect transistors (NSFETs), NMOS regions including fin field-effect transistors (FinFETs) PMOS regions including NSFETs, and PMOS regions including FinFETs and semiconductor devices formed by the method are disclosed. In an embodiment, a device includes a semiconductor substrate; a first nanostructure over the semiconductor substrate; a first epitaxial source/drain region adjacent the first nanostructure; a first inner spacer layer adjacent the first epitaxial source/drain region, the first inner spacer layer comprising a first material; a second nanostructure over the semiconductor substrate; a second epitaxial source/drain region adjacent the second nanostructure; and a second inner spacer layer adjacent the second epitaxial source/drain region, the second inner spacer layer comprising a second material different from the first material.
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