Invention Application
- Patent Title: SPIRAL TRANSIENT VOLTAGE SUPPRESSOR OR ZENER STRUCTURE
-
Application No.: US17111181Application Date: 2020-12-03
-
Publication No.: US20220181503A1Publication Date: 2022-06-09
- Inventor: David Francis Courtney
- Applicant: Semtech Corporation
- Applicant Address: US CA Camarillo
- Assignee: Semtech Corporation
- Current Assignee: Semtech Corporation
- Current Assignee Address: US CA Camarillo
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/66 ; H01L29/06

Abstract:
A transient voltage suppressor is disclosed that includes an electrode, a substrate disposed on the electrode, the substrate having a first doping, an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping, a channel formed in the epitaxial layer having a width W, a length L and a plurality of curved regions, the channel forming a plurality of adjacent sections, the channel having a third doping that is different from the first doping and the second doping and a metal layer formed on top of the channel and contained within the width W of the channel.
Public/Granted literature
- US11600730B2 Spiral transient voltage suppressor or Zener structure Public/Granted day:2023-03-07
Information query
IPC分类: