SPIRAL TRANSIENT VOLTAGE SUPPRESSOR OR ZENER STRUCTURE

    公开(公告)号:US20220181503A1

    公开(公告)日:2022-06-09

    申请号:US17111181

    申请日:2020-12-03

    Abstract: A transient voltage suppressor is disclosed that includes an electrode, a substrate disposed on the electrode, the substrate having a first doping, an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping, a channel formed in the epitaxial layer having a width W, a length L and a plurality of curved regions, the channel forming a plurality of adjacent sections, the channel having a third doping that is different from the first doping and the second doping and a metal layer formed on top of the channel and contained within the width W of the channel.

    System and method for providing mechanical isolation of assembled diodes

    公开(公告)号:US11270983B2

    公开(公告)日:2022-03-08

    申请号:US16601150

    申请日:2019-10-14

    Abstract: A circuit, comprising a diode, a conductive upper support disposed on top of the diode and electrically coupled to the diode, a conductive lower support disposed underneath the diode and electrically coupled to the diode, a mechanical support disposed adjacent to the diode, the conductive upper support and the conductive lower support, an insulator disposed underneath the mechanical support, an upper terminal coupled to the mechanical support and electrically coupled to the conductive upper support and a lower terminal coupled to the insulator and electrically coupled to the conductive lower support.

    Spiral transient voltage suppressor or Zener structure

    公开(公告)号:US11600730B2

    公开(公告)日:2023-03-07

    申请号:US17111181

    申请日:2020-12-03

    Abstract: A transient voltage suppressor is disclosed that includes an electrode, a substrate disposed on the electrode, the substrate having a first doping, an epitaxial layer disposed on the substrate, the epitaxial layer having a second doping that is different from the first doping, a channel formed in the epitaxial layer having a width W, a length L and a plurality of curved regions, the channel forming a plurality of adjacent sections, the channel having a third doping that is different from the first doping and the second doping and a metal layer formed on top of the channel and contained within the width W of the channel.

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